Adaptation Of The Berkeley Short-channel Igfet Model Code Base For Atomistic Bti/rtn Simulation

Abstract

The aggresive downscaling of CMOS technology intensies both time-zero and time-dependent device variability. During the last years, extensive research on degradation eects has demonstrated their importance for the reliability of downscaled devices. Two mechanisms with an increasingly adverse impact on threshold voltage Vth variations are Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN). Accurate and user-friendly simulation frameworks are crucial for the development of appropriate mitigation techniques.During the last years, an atomistic model that incorporates the transient nature of BTI/RTN mechanisms has been presented. However, this approach is only implemented on top of commercial tools that feature reduced exibility and increased CPU times. The current thesis proposes the adaptation of the BSIM source code, in order to include the atomistic BTI/RTN model. Using an open source SPICE distribution as a concept vehicle, we developed a SPICE simulator that seamlessly integrates BTI and RTN in transient simulations. The resulting implementation is far more elegant than previous attempts, both from the point of the developer (a single code base) and that of the end-user (no wrapper scripts; only four parameters added to the modelcard). The correctness of the implementation presented herein will beveried against already published results.